Electron irradiation of power
semiconductors
Precise modification of properties through the use of electron radiation
Electron irradiation of power
Irradiation of power semiconductors: Optimization of the switching and flow behavior
Power semiconductors are key components in power electronics that are used in a wide range of applications, from energy distribution to industrial drives. Electron irradiation (E-Beam) is used to optimally adapt the switching and conduction behavior of these semiconductor components to the respective requirements: a proven process that specifically controls the service life of the charge carriers by generating recombination centers.
Examples of semiconductor components that are frequently subjected to electron irradiation:
- MOSFETs
- IGBTs
- Diodes
- Thyristors
These components benefit from improved switching properties, reduced losses and an extended service life.
Electron radiation vs. diffusion: Technological advantages of electron irradiation
Compared to other methods, such as diffusion (e.g. platinum, gold or palladium diffusion), treatment with electron radiation offers a number of advantages:
No use of additional doping elements
This means that there is no change in the chemical composition of the semiconductor material. This prevents precipitation or agglomeration of heavy metals and enables very fine control of switching times and junction capacitance.
Performance at room temperature
Electron irradiation takes place at comparatively low temperatures, which reduces the thermal load on the semiconductor and preserves the integrity of the crystal lattice. A temperature of less than 270°C is required to stabilize the defects created.
High reproducibility and flexibility
By adjusting the electron fluence and irradiation energy, electron irradiation enables flexible design of the defects. The process therefore produces a reproducible, homogeneous minority carrier lifetime and is less susceptible to process fluctuations.
Lower leakage current in blocking state
Electron irradiation generates a lower leakage current in the blocking state. By selecting the annealing temperature and irradiation dose, the ratio of double sites and oxygen/vacancy complexes can be specifically adjusted and the properties of the recombination centers optimized.
Efficiency on a new level: Process advantages through stack irradiation
With stacked irradiation, we at BGS not only optimize individual power semiconductors, but also several at the same time – for maximum efficiency. In this process, numerous power semiconductors are stacked on top of each other and simultaneously exposed to the electron radiation. This method enables more efficient processing of large quantities, as many semiconductors can be irradiated at the same time, which significantly shortens the process time.
The use of high-energy electron radiation (in the range of several MeV) ensures sufficient penetration depth to ensure homogeneous irradiation of all power semiconductors and to obtain the desired defect concentration.
Where are power semiconductors used?: Industries and applications
Intelligent power grids (smart grids)
They enable large currents and voltages to be switched quickly and efficiently. This is crucial for the control and stability of modern power distribution systems.
Industrial drive technology
Modified diodes and thyristors increase the energy efficiency and service life of motor controllers. These components enable precise control in high-performance motors, especially in applications such as robotics and production automation.
E-mobility
Modified MOSFETs and IGBTs increase efficiency and reliability in electric drives and power electronics, especially under extreme conditions such as high temperatures and heavy loads.
Cooperation: Your advantages with BGS
Personal expert
A direct specialist consultant for your customized solution
Stack irradiation
Efficient processing of large quantities of power semiconductors
Highest quality
High-quality and reproducible processes certified according to ISO 9001
Contact
